Electrodeposition of In₂S₃ Thin Films onto FTO Substrate from DMSO Solution

摘要

In current work we report the electrochemical deposition of In2S3 thin films from a In(ClO4)3 and S8 indimethylsulfoxide (DMSO) solution. Potenciodynamic experiments were conducted to study theelectrochemical response of the precursors in the organic solvent. Chronoamperometric measurementsallowed to establish the nucleation-growth mechanism of the indium sulfide phase and also to build aproper potential step program for achieving adherent good quality thin films. SEM micrographs2 exhibited complete substrate coverage whereas EDAX analysis gave In/S ratio very close to /3.Grazing XRD analysis showed that the films were grown in the tetragonal phase without the presenceof oxide or hydroxide phases as usually is reported in aqueous medium. Results open the possibility ofapplying the procedure to the electrodeposition of an alternative In2S3 buffer layer onto copper indiumdiselenide substrates for evaluating the performance of the corresponding solar cell.