Photoluminescence and Optoelectronics Characteristics of Eu-doped InBO₃ Nanocrystals

摘要

Indium boron oxide(InBO3) nanocrystals doped with Eu ions prepared via the sol-gel method arecharacterized. The photoluminescence spectra excited at 263 nm have a strong red emission band with5 7 5 7 a peak at 616 nm. The D0 F1 (593 nm) and D0 F2 (616 nm) transitions of Eu appear at aquenching concentration of above 5 mol%. The optical absorption spectra of the Eu-doped hostannealed at 700 C exhibit a band-gap energy of 5.05 eV. It is found that InBO3:xEu (x= 5 mol%)added to a hybrid solar cell improves the short-circuit current density and increases the photoelectricconversion efficiency to 1.88%.