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Formulae for secondary electron yield and the ratio of the average number of secondary electrons generated by a single backscattered electron to that generated by a single primary electron

机译:二次电子产率的公式以及单个反向散射电子产生的二次电子与单个初级电子产生的二次电子的平均数之比

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On the basis of the characteristic of secondary electron emission, the number of secondary electrons (i style="mso-bidi-font-style:normal"?′/isubPE??/sub) released per primary electron entering metals in the incident energy (i style="mso-bidi-font-style:normal"span style="mso-bidi-font-weight:bold"W/span/isubspan style="mso-bidi-font-weight:bold"p0/span/sub) range 10-102 keV and the incident angle span style="mso-bidi-font-weight:bold"(i style="mso-bidi-font-style:normal"??/ispan style="mso-bidi-font-weight:bold") range 0-89span style="font-family:Symbol;mso-ascii-font-family: " times="" new="" roman";mso-hansi-font-family:"times="" roman";mso-char-type:symbol;="" mso-symbol-font-family:symbol"="" lang="EN-GB"?° was deduced. In addition, the number of secondary electrons released per primary electron entering metals at i style="mso-bidi-font-style:normal"??=/ispan style="mso-bidi-font-weight: bold"0 (i style="mso-bidi-font-style:normal"?′/isubPE0/sub)b /bspan style="mso-bidi-font-weight:bold"was obtainedb./b Based on the deduced i style="mso-bidi-font-style:normal"?′/isubPE??/sub, the characteristic of span style="mso-bidi-font-weight:bold"the emission angle distribution of the backscattered electrons and the definition of i style="mso-bidi-font-style:normal"?2/isub??/sub, the relationships among i style="mso-bidi-font-style:normal"?2/isub??/sub,span style="mso-bidi-font-weight: bold" cosi style="mso-bidi-font-style:normal"?? /iand the parameter i style="mso-bidi-font-style:normal"x/i were given, where i style="mso-bidi-font-style: normal"?2/isub??/sub is span style="mso-bidi-font-weight:bold"theb /bratio of the average number of secondary electrons generated by a single backscattered electron to that generated by a single primary electron entering the emitter at i style="mso-bidi-font-style:normal"??/i. Considering the relationship between i style="mso-bidi-font-style:normal"?′/isubPE??/sub and i style="mso-bidi-font-style:normal"?′/isubPE0/subb /bspan style="mso-bidi-font-weight:bold"and theb /brelationship between the secondary electron yields span style="mso-bidi-font-weight:bold"at i style="mso-bidi-font-style:normal"W/isubp0/sub=10-102 keV and i style="mso-bidi-font-style:normal"span style="mso-bidi-font-weight:bold"??=/span/i0-89span style="font-family:Symbol;mso-ascii-font-family:" times="" new="" roman";="" mso-hansi-font-family:"times="" roman";mso-char-type:symbol;mso-symbol-font-family:="" symbol"="" lang="EN-GB"?°i style="mso-bidi-font-style:normal" /i(i style="mso-bidi-font-style:normal"?′/isub??/sub)b /bspan style="mso-bidi-font-weight:bold"and the secon
机译:在...的基础上二次电子发射特性,二次电子数电子(?′ PE ?? )已发布每个初级电子进入金属时的入射能( style =“ mso-bidi-font-weight:bold”> W style =“ mso-bidi-font-weight:bold”> p0 )范围为10-102 keV,并且入射角 style =“ mso-bidi-font-weight:bold”>( ?? style =“ mso-bidi- font-weight:bold“>)范围0-89 style =“ font-family:Symbol; mso-ascii-font-family:“ times =”“ new =”“罗马”; mso-hansi-font-family:“ times =”“罗马”; mso-char-type:symbol; =“” mso-symbol-font-family:symbol“ =推导了“” lang =“ EN-GB”>?°。此外,数字每个进入电子的一次电子释放的二次电子的数量,以 ?? = style =“ mso-bidi-font-weight:粗体“> 0(?' PE0 style =” mso- bidi-font-weight:bold“>已获得。基于推导?' PE ?? , style =“ mso-bidi-font-weight:bold”>发射角的特征散射电子的分布和?2 ?? 的定义,?2 ?? , style =” mso-bidi-font-weight:粗体“> cos ?? 和参数 x 给出了,其中?2 ?? 是 style =” mso-bidi-font-weight:bold“> 比率单次产生的二次电子的平均数电子向后散射到单个初级电子进入产生的电子发射器位于 ?? 。考虑到?′ PE ?? 之间的关系和?' PE0 style =“ mso-bidi-font-weight :bold“>和 之间的关系二次电子在 W p0 处产生 style =“ mso-bidi-font-weight:bold”> = 10-102 keV和 style =“ mso-bidi-font-weight:bold”> ?? = 0 -89 style =“ font-family:Symbol; mso-ascii-font-family:” times =“” new =“” roman“; =”“ mso-hansi-font-family:” times =“”罗马“; mso-char-type:symbol; mso-symbol-font-family:=”“ symbol” =“” lang =“ EN-GB”>?° ?' ?? style = “ mso-bidi-font-weight:bold”>和secon

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