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Efficient Carbon Nanotube Galois Field Circuit Design

机译:高效碳纳米管Galois现场电路设计

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References(6) Cited-By(12) For the last couple of decades, multiple-valued logic (MVL) such as ternary logic styles has attracted considerable attention. MVL circuits can reduce the number of operations necessary to implement a particular mathematical function and further have an advantage in terms of reduced area. Carbon nanotube field effect transistors (CNFETs) are being extensively studied as possible successors to Silicon MOSFETs. Implementable CNTFET circuits have operational characteristics to approach the advantage of using MVL in voltage mode. In this paper through using “carbon nanotube field effect transistor” characteristics we present efficient galois field operations. Consequently, the simulation denouements demonstrate the efficient circuit parameters such as chip area, delay, power and power delay product.
机译:参考文献(6)引用了(12)在过去的几十年中,诸如三元逻辑样式的多值逻辑(MVL)引起了相当大的关注。 MVL电路可以减少实现特定数学函数所需的操作数,并且在减小面积方面具有优势。碳纳米管场效应晶体管(CNFET)被广泛研究作为硅MOSFET的可能后继者。可实现的CNTFET电路具有操作特性,可以接近在电压模式下使用MVL的优势。在本文中,通过使用“碳纳米管场效应晶体管”的特性,我们提出了有效的伽罗瓦场操作。因此,仿真参数说明了有效的电路参数,例如芯片面积,延迟,功率和功率延迟乘积。

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