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首页> 外文期刊>Asia-Pacific Journal of Science and Technology >Shrinking size effects of CPP-TMR and CPP-GMR heads: failure phenomena caused by electrostatic discharge
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Shrinking size effects of CPP-TMR and CPP-GMR heads: failure phenomena caused by electrostatic discharge

机译:CPP-TMR和CPP-GMR磁头的尺寸缩小效应:静电放电导致的故障现象

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This work presents the tolerance of CPP-TMR and CPP-GMR heads to ESD events when the sizes ofboth reader technologies are shrinking. The shrinking size effect actually indicates the growth of AD targetingto Tb/in2. Blocking temperature, melting temperature, and electric fi eld breakdown of the oxide layer are the keyparameters for investigation upon the temperature increment of CPP-TMR and CPP-GMR heads caused by anESD current. The investigation was carried out by using a fi nite element analysis, solver and simulation software.The results reveal that at 30% shrinking size, CPP-TMR is 15% less tolerance to ESD phenomena than that ofCPP-GMR technology for the case of hard failure aspect. On the other hand, CPP-GMR is approximately 10%more sensitive to ESD events than CPP-TMR technology for the case of soft failure aspect.
机译:当两种阅读器技术的尺寸都在缩小时,这项工作提出了CPP-TMR和CPP-GMR磁头对ESD事件的耐受性。尺寸缩小效应实际上表明AD靶向Tb / in2的增长。阻塞温度,熔化温度和氧化物层的电场击穿是研究由ESD电流引起的CPP-TMR和CPP-GMR磁头温度升高的关键参数。使用有限元分析,求解器和仿真软件进行了研究。结果表明,在尺寸缩小30%的情况下,CPP-TMR在ESD情况下对ESD现象的容忍度比CPP-GMR技术低15%。失败方面。另一方面,在软故障方面,CPP-GMR对ESD事件的敏感性比CPP-TMR技术高约10%。

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