Calculation of the energy deposited on the surface of 60 C molecule resulting from the fall of the fast Si + ions using the Beth - Bloch equation

摘要

The energy deposition of slow Si + ions interacting with 60 C molecule is determined theoretically, by using Bethe– Bloch equation which is applied at high energy. The obtained result is compared with Local Density Approximation equation at the energy (0.5 MeV) and found good agreement between the two formulas. The behavior of energy deposition with the atomic numbers has been calculated. Stopping number for both equations has been compared too.