GENERAL EXPRESSION OF TEMPERATURE DEPENDENCE FOR HOLE AND ELECTRON CONCENTRATION IN MANY-VALLEY SEMICONDUCTORS

Vahanyan A.I.

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GENERAL EXPRESSION OF TEMPERATURE DEPENDENCE FOR HOLE AND ELECTRON CONCENTRATION IN MANY-VALLEY SEMICONDUCTORS

机译：多谷半导体中孔和电子浓度的温度依赖性的一般表达

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摘要

Onthebasisofchargeneutralityequation,theexpressionforthetemperaturedependenceofthechargecarrierconcentrationinanon-degeneratemany-valleysemiconductorisderived

机译：基于电荷中性方程，在不退化的许多谷类半导体上推导电荷载流子浓度的温度依赖性

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《Armenian Journal of Physics 》 |2014年第2期| 共页
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Vahanyan A.I.;
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中图分类物理学 ;
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GENERAL EXPRESSION OF TEMPERATURE DEPENDENCE FOR HOLE AND ELECTRON CONCENTRATION IN MANY-VALLEY SEMICONDUCTORS

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