The Effect of He-Ne and Diode Lasers on the Electrical Characteristics of Silicon Diode

摘要

The effect of He-Ne (632.8 nm) and diode (650 nm) lasers on the electrical characteristics of silicon diode have been studied. The electrical characteristics of the diode were recorded before laser irradiations, then the diode is subjected to He-Ne laser for 5 and 10 minutes and then the diode electrical characteristics were recorded for each time of exposure and the same was done in the case of irradiation with diode laser. The electrical characteristics of the diode before and after laser irradiations were compared and thermal effect was noticed when compared the effect of lasers irradiation and the well known temperature effect on the electrical characteristics of the diode. It was found that the effect of the He-Ne (632.8 nm) and diode laser (650 nm) on the electrical characteristics of silicon diode at exposure time of 5 minutes were comparable but for 10 minutes of exposure the effect of He-Ne laser irradiation on the characteristics was different from that of diode laser and this is due to the fact that the two lasers has different properties.