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首页> 外文期刊>American Journal of Analytical Chemistry >Low Temperature Electrical Transport Studies of the Conducting Polymer Versicon TM
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Low Temperature Electrical Transport Studies of the Conducting Polymer Versicon TM

机译:导电聚合物Versicon TM的低温电传输研究

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Thermal analysis and low temperature D.C. electrical transport measurements of the conducting polymer Versicon? were carried out between 20 K and 300 K. The material was found to be stable up to 498 K (225°C), with a glass transition at 210 K (-63°C), and a crystalline transition at 436 K (163°C). The electrical resistivity data best fitted the Fluctuation Induced Tunneling (FIT) model, suggesting that at low temperatures, the electron transport is by tunneling through thermally modulated barriers. The high temperature data best fitted the thermally activated hopping model, with an activation energy of 0.015 eV, suggesting that the thermally activated hopping may be a parallel transport process to fluctuation induced tunneling, becoming dominant at higher temperatures. From the FIT model the inter-particle distance was estimated to be 12 ?. The electrical transport results were also consistent with the assertion that Versicon? forms spherical aggregates, creating conducting pathways even in an insulating matrix.
机译:导电聚合物Versicon?的热分析和低温直流电传输测量在20 K和300 K之间进行。发现该材料在高达498 K(225°C)时稳定,在210 K(-63°C)时具有玻璃化转变,在436 K(163 °C)。电阻率数据最适合波动诱导隧穿(FIT)模型,表明在低温下,电子传输是通过隧穿热调制势垒实现的。高温数据最适合热活化的跳跃模型,其活化能为0.015 eV,这表明热活化的跳跃可能是与波动诱发隧穿的平行传输过程,在较高温度下变得占优势。根据FIT模型,粒子间距离估计为12?。电传输结果也与Versicon?形成球形聚集体,即使在绝缘基质中也形成导电路径。

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