Research of shot noise based on realistic nano-MOSFETs

摘要

Experimental measurements and simulation results have shown that the dominant noise source of current noise changes from thermal noise to shot noise with scaling of MOSFET, and shot noise were suppressed by Fermi and Coulomb interactions. In this paper, Shot noise test system is established, and experimental results proved that shot noise were suppressed, and the expressions of shot noise in realistic nano-MOSFETs are derived with considering Fermi effect, Coulomb interaction and the combination of the both co-existence, respectively. On this basis, the variation of shot noise with voltage, temperature and source-drain doping were researched. The results we obtained are consistent with those from experiments and the theoretically explanation is given. At the same time, the shot noise test system is suitable for traditional nanoscale electronic components; the shot noise model is suitable for nanoscale MOSFET.