Formation energies of intrinsic point defects in monoclinic VO2 studied by first-principles calculations

摘要

VO₂ is an attractive candidate for intelligent windows and thermal sensors. There are challenges for developing VO₂-based devices, since the properties of monoclinic VO₂ are very sensitive to its intrinsic point defects. In this work, the formation energies of the intrinsic point defects in monoclinic VO₂ were studied through the first-principles calculations. Vacancies, interstitials, as well as antisites at various charge states were taken into consideration, and the finite-size supercell correction scheme was adopted as the charge correction scheme. Our calculation results show that the oxygen interstitial and oxygen vacancy are the most abundant intrinsic defects in the oxygen rich and oxygen deficient condition, respectively, indicating a consistency with the experimental results. The calculation results suggest that the oxygen interstitial or oxygen vacancy is correlated with the charge localization, which can introduce holes or electrons as free carriers and subsequently narrow the band gap of monoclinic VO₂. These calculations and interpretations concerning the intrinsic point defects would be helpful for developing VO₂-based devices through defect modifications.