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首页> 外文期刊>AIP Advances >Microstructure of Cu2S nanoprecipitates and its effect on electrical and thermal properties in thermoelectric Cu2Zn0.2Sn0.8S3 ceramics
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Microstructure of Cu2S nanoprecipitates and its effect on electrical and thermal properties in thermoelectric Cu2Zn0.2Sn0.8S3 ceramics

机译:Cu2S纳米沉淀的微观结构及其对热电Cu2Zn0.2Sn0.8S3陶瓷电学和热学性能的影响

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The microstructures of Cu2Zn0.2Sn0.8S3 ceramics with high electrical conductivity and low thermal conductivity were investigated by a combination of selected area electron diffraction, high-resolution transmission electron microscopy, X-ray energy dispersive spectroscopy and atom force microscopy techniques. The plate-like tetragonal metastable Cu2S nanoprecipitates with elongated and equiaxed shape were embedded in a distinctive mosaic nanostructure with roughly 10 nm wide facetted domains (fully disordered phase) surrounded by a ~5 nm wide connective phase (a semi-ordered monoclinic-Cu4ZnSn2S7 phase) were observed. These metastable Cu2S nanoprecipitates show clear orientation relationships with the matrix that the plates align with three crystal axes of cubic lattice. A combination of conductive atomic force microscopy and Kelvin probe force microscopy reveals that the nanoprecipitates have higher electrical conductivity than the matrix due to the higher carrier density, which can inject into the matrix and enhance the total electric conductivity of the sample. Furthermore, a mechanism of phonon scattering is proposed based on the effects of the occupation disorder of Cu atoms in Cu2S nanoprecipitates, coherent heterointerfaces between Cu2S and matrix, and the extended strain field in the matrix regions adjacent to the Cu2S nanoprecipitates.
机译:通过选择区域电子衍射,高分辨率透射电子显微镜,X射线能谱和原子力显微镜技术研究了高导电率和低导热率的Cu2Zn0.2Sn0.8S3陶瓷的微观结构。具有细长和等轴形状的板状四方亚稳态Cu2S纳米沉淀物被嵌入到一个独特的镶嵌纳米结构中,该结构具有约10 nm宽的多面域(完全无序的相),被约5 nm宽的连接相(半有序单斜晶Cu4ZnSn2S7相)包围)。这些亚稳的Cu2S纳米沉淀物与基体的取向关系清晰,板与立方晶格的三个晶轴对齐。导电原子力显微镜和开尔文探针力显微镜的结合显示,由于较高的载流子密度,纳米沉淀物比基质具有更高的电导率,可以将其注入基质并提高样品的总电导率。此外,基于Cu 2 S纳米沉淀物中Cu原子的占有无序,Cu 2 S与基质之间的相干异质界面以及邻近Cu 2 S纳米沉淀的基质区域中的扩展应变场的影响,提出了声子散射的机理。

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