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首页> 外文期刊>AIP Advances >Control of indium tin oxide anode work function modified using Langmuir-Blodgett monolayer for high-efficiency organic photovoltaics
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Control of indium tin oxide anode work function modified using Langmuir-Blodgett monolayer for high-efficiency organic photovoltaics

机译:使用Langmuir-Blodgett单层改性的铟锡氧化物阳极功函数的控制,用于高效有机光伏

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The use of Langmuir-Blodgett (LB) monolayers to modify the indium tin oxide (ITO) work function and thus improve the performance of zinc phthalocyanine (ZnPc)/fullerene (C60)-based and boron subphthalocyanine chloride (SubPc)/C60-based small molecule organic photovoltaic devices (OPVs) was examined. In general, LB precursor compounds contain one or more long alkyl chain substituents that can act as spacers to prevent electrical contact with adjoining electrode surfaces. As one example of such a compound, arachidic acid (CH3(CH2)18COOH) was inserted in the forms of one-layer, three-layer or five-layer LB films between the anode ITO layer and the p-type layer in ZnPc-C60-based OPVs to investigate the effects of the long alkyl chain group when it acts as an electrically insulating spacer. The short-circuit current density (Jsc) values of the OPVs with the three- and five-layer inserts (1.78 mA·cm?2 and 0.61 mA·cm?2, respectively) were reduced dramatically, whereas the Jsc value for the OPV with the single-layer insertion (2.88 mA·cm?2) was comparable to that of the OPV without any insert (3.14 mA·cm-2). The ITO work function was shifted positively by LB deposition of a surfactant compound, C9F19C2H4-O-C2H4-COOH (PFECA), which contained a fluorinated head group. This positive effect was maintained even after formation of an upper p-type organic layer. The Jsc and open-circuit voltage (Voc) of the SubPc-C60-based OPV with the LB-modified ITO layers were effectively enhanced. As a result, a 42% increase in device efficiency was achieved.
机译:使用Langmuir-Blodgett(LB)单层改性铟锡氧化物(ITO)的功函,从而改善基于锌酞菁(ZnPc)/富勒烯(C 60 )和硼亚酞菁的性能研究了基于氯化物(SubPc)/ C 60 的小分子有机光伏器件(OPV)。通常,LB前体化合物包含一个或多个长烷基链取代基,这些取代基可充当间隔基以防止与相邻电极表面发生电接触。作为这种化合物的一个实例,以一层的形式插入了花生酸(CH 3 (CH 2 18 COOH)。 ZnPc-C 60 的OPV中阳极ITO层和p型层之间的三层,三层或五层LB膜,以研究长烷基链基团作为电绝缘垫片。具有三层和五层插入物的OPV的短路电流密度(J sc )值(1.78 mA·cm ?2 和0.61 mA·cm <分别降低了sup>?2 ),而单层插入的OPV的J sc 值(2.88 mA·cm ?2 ) )与没有插入物(3.14 mA·cm -2 )的OPV相当。 LB的表面活性剂化合物C 9 F 19 C 2 H 4 的LB沉积使ITO功函数正移> -OC 2 H 4 -COOH(PFECA),其中包含一个氟化的头基。即使在形成上部p型有机层之后也保持了这种积极效果。具有LB改性ITO层的SubPc-C 60 基OPV的J sc 和开路电压(V oc )为有效增强。结果,设备效率提高了42%。

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