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Transient thermal analysis of semiconductor diode lasers under pulsed operation

机译:脉冲操作下半导体二极管激光器的瞬态热分析

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Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are ‘short’. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper, we present an experimental and theoretical analysis of the effect of pulse width on laser characteristics. First, a measurement method is introduced to study thermal transients of edge-emitting lasers during pulsed operation. This method can also be applied to lasers that do not operate in continuous-wave mode. Secondly, an analytical thermal model is presented which is used to fit the experimental data to extract important parameters for thermal analysis. Although commercial numerical tools are available for such transient analyses, this model is more suitable for parameter extraction due to its analytical nature. Thirdly, to validate this approach, it was used to study a GaSb-based inter-band laser and an InP-based quantum cascade laser (QCL). The maximum pulse-width for less than 5% error in the measured threshold currents was determined to be 200 and 25 ns for the GaSb-based laser and QCL, respectively.
机译:通常假设在脉冲操作期间半导体激光器的自热可以忽略不计,前提是脉冲是“短”的。但是,对于给定设备如何避免自身发热,在脉冲宽度上限方面尚无共识。在本文中,我们对脉冲宽度对激光特性的影响进行了实验和理论分析。首先,引入一种测量方法来研究脉冲操作期间边缘发射激光器的热瞬态。该方法也可以应用于不以连续波模式工作的激光器。其次,提出了一个解析热模型,该模型用于拟合实验数据以提取用于热分析的重要参数。尽管商用数值工具可用于此类瞬态分析,但由于其分析性质,该模型更适合于参数提取。第三,为了验证这种方法,它被用于研究基于GaSb的带间激光器和基于InP的量子级联激光器(QCL)。对于基于GaSb的激光器和QCL,测得的阈值电流中小于5%误差的最大脉冲宽度分别确定为200 ns和25 ns。

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