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首页> 外文期刊>AIP Advances >Formation of high electrical-resistivity thin surface layer on carbonyl-iron powder (CIP) and thermal stability of nanocrystalline structure and vortex magnetic structure of CIP
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Formation of high electrical-resistivity thin surface layer on carbonyl-iron powder (CIP) and thermal stability of nanocrystalline structure and vortex magnetic structure of CIP

机译:在羰基铁粉(CIP)上形成高电阻率的薄表面层以及CIP的纳米晶体结构和涡旋磁结构的热稳定性

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This study focuses on the carbonyl-iron powder (CIP) used in the metal composite bulk magnetic core for high-efficient/light-weight SiC/GaN power device MHz switching dc-dc converter, where the fine CIP with a mean diameter of 1.1 μm is used to suppress the MHz band eddy current inside the CIP body. When applying the CIP to composite core together with the resin matrix, high electrical resistivity layer must be formed on the CIP-surface in order to suppress the overlapped eddy current between adjacent CIPs. In this study, tens nm thick silica (SiO2) was successfully deposited on the CIP-surface by using hydrolysis of TEOS (Si(OC2H5)4). Also tens nm thick oxidized layer of the CIP-surface was successfully formed by using CIP annealing in dry air. The SiC/GaN power device can operate at ambient temperature over 200 degree-C, and the composite magnetic core is required to operate at such ambient temperature. The as-made CIP had small coercivity below 800 A/m (10 Oe) due to its nanocrystalline-structure and had a single vortex magnetic structure. From the experimental results, both nanocrystalline and single vortex magnetic structure were maintained after heat-exposure of 250 degree-C, and the powdercoercivity after same heat-exposure was nearly same as that of the as-made CIP. Therefore, the CIP with thermally stable nanocrystalline-structure and vortex magnetic state was considered to be heat-resistant magnetic powder used in the iron-based composite core for SiC/GaN power electronics.
机译:这项研究的重点是用于金属复合体磁芯的羰基铁粉(CIP),用于高效/轻质SiC / GaN功率器件MHz开关DC-DC转换器,其中平均直径为1.1的精细CIP μm用于抑制CIP体内的MHz频带涡流。当将CIP与树脂基体一起应用于复合芯时,必须在CIP表面上形成高电阻率层,以抑制相邻CIP之间的涡流重叠。在这项研究中,通过使用TEOS(Si(OC2H5)4)的水解,在CIP表面成功沉积了数十纳米厚的二氧化硅(SiO2)。通过在干燥的空气中进行CIP退火,也成功地形成了几十纳米厚的CIP表面氧化层。 SiC / GaN功率器件可以在200摄氏度以上的环境温度下运行,并且要求复合磁芯在这样的环境温度下运行。制成的CIP由于其纳米晶体结构而在800 A / m(10 Oe)以下具有较小的矫顽力,并且具有单个涡旋磁结构。根据实验结果,在250℃的热暴露后,纳米晶体和单涡旋磁性结构都得以维持,并且在相同的热暴露后的粉末矫顽力与制成的CIP几乎相同。因此,具有热稳定的纳米晶体结构和涡旋磁态的CIP被认为是用于SiC / GaN电力电子设备的铁基复合芯的耐热磁粉。

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