Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

摘要

Trap states in Al0.55Ga0.45N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×1013 eV?1·cm?2. Al2O3 gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs.