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首页> 外文期刊>AIP Advances >Linear mean free path and quadratic temperature dependence of electron-phonon scattering rate in V82Al18-xFex alloys at low temperature
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Linear mean free path and quadratic temperature dependence of electron-phonon scattering rate in V82Al18-xFex alloys at low temperature

机译:低温下V82Al18-xFex合金中电子-声子散射速率的线性平均自由程和二次温度依赖性

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We have reported a comprehensive study on temperature and disorder dependence of inelastic electron dephasing scattering rate in disordered V82 Al 18-xFex alloys. The dephasing scattering time has been measured by analysis of low field magnetoresistance using the weak localization theory. In absence of magnetic field the variation of low temperature resistivity rise follows the relation Δ ρ ( T ) ∝ ? ρ 0 5 / 2 T , which is well described by three-dimensional electron-electron interactions. The temperature-independent dephasing rate strongly depends on disorder and follows the relation τ 0 ? 1 ∝ l e , where le is the electron elastic mean free path. The inelastic electron-phonon scattering rate obeying the anomalous relation τ e ? p h ? 1 ∝ T 2 l e . This anomalous behavior of τ e ? p h ? 1 cannot be explained in terms of current theories for electron-phonon scattering in impure dirty conductors.
机译:我们已经报告了对无序V82 Al 18-xFex合金中非弹性电子移相散射速率的温度和无序依赖性的综合研究。通过使用弱定位理论分析低场磁阻,已测量了相移散射时间。在没有磁场的情况下,低温电阻率上升的变化遵循关系Δρ(T)∝? ρ0 5/2 T,可以通过三维电子-电子相互作用很好地描述。与温度无关的移相速率很大程度上取决于无序性,并且遵循关系τ0? 1 ∝ l e,其中le是电子弹性平均自由程。服从反常关系τe的非弹性电子-声子散射率。 h 1 ∝ T 2 l e。 τe的这种异常行为? h在不纯的脏导体中电子声子散射的现有理论不能用图1来解释。

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