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Evaluation of the thermal conductance of flip-chip bonding structure utilizing the measurement based on Fourier’s law of heat conduction at steady-state

机译:利用基于傅立叶稳态热定律的测量评估倒装芯片键合结构的热导率

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Fourier’s law of heat conduction at steady-state was adopted to establish a measurement method utilizing platinum (Pt) thin-film electrodes as the heater and the temperature sensor. The thermal conductivities (κ’s) of Pyrex glass, an epoxy resin and a commercial underfill for flip-chip devices were measured and a good agreement with previously reported values was obtained. The thermal boundary resistances (RTBR’s) of Pt/sample interfaces were also extracted for discussing their influence on the thermal conduction of samples. Afterward, the flip-chip samples with 2×2 solder joint array utilizing Si wafers as the die and the substrate, without and with the underfills, were prepared and their thermal conductance were measured. For the sample without underfill, the air presenting in the gap of die and the substrate led to the poor thermal conductance of sample. With the insertion of underfills, the thermal conductance of flip-chip samples improved. The resistance to heat transfer across Si/underfill interfaces was also suppressed and to promote the thermal conductance of samples. The thermal properties of underfill and RTBR at Si/underfill interface were further implanted in the calculation of thermal conductance of flip-chip samples containing various solder joint arrays. The increasing number of solder joints diminished the influence of thermal conduction of underfill and RTBR of Si/underfill interface on the thermal conductance of samples. The insertion of underfill with high-κ value might promote the heat conductance of samples containing low-density solder joint arrays; however, it became insignificant in improving the heat conductance of samples containing high-density solder joint arrays.
机译:采用傅立叶稳态热传导定律建立了一种利用铂(Pt)薄膜电极作为加热器和温度传感器的测量方法。测量了派热克斯玻璃,环氧树脂和倒装芯片设备的商用底部填充材料的导热率(κ),并与先前报道的值取得了良好的一致性。还提取了Pt /样品界面的热边界电阻(R TBR ),以讨论它们对样品导热的影响。此后,制备了以2片2焊点阵列为倒装芯片的样品,该样品以Si晶片和裸片为衬底,并且没有和有底部填充剂,并测量了它们的热导率。对于没有底部填充的样品,存在于芯片和基板间隙中的空气会导致样品导热性差。随着底部填充物的插入,倒装芯片样品的导热性得到了改善。跨Si /底部填充界面的传热阻力也得到抑制,并提高了样品的导热性。在计算包含各种焊点阵列的倒装芯片样品的热导率时,还进一步注入了底部填充和Si /底部填充界面处的R TBR 的热性能。焊点数量的增加减少了底部填充材料的热传导和Si /底部填充材料界面的R TBR 对样品导热性的影响。插入高κ值的底部填充剂可能会提高包含低密度焊点阵列的样品的导热性;然而,在提高包含高密度焊点阵列的样品的导热性方面起着微不足道的作用。

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