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Field-dependent critical state of high-Tc superconducting strip simultaneously exposed to transport current and perpendicular magnetic field

机译:同时暴露于传输电流和垂直磁场的高Tc超导带材的场相关临界状态

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We present an exact analytical approach for arbitrary field-dependent critical state of high-T c superconducting strip with transport current. The sheet current and flux-density profiles are derived by solving the integral equations, which agree with experiments quite well. For small transport current, the approximate explicit expressions of sheet current, flux-density and penetration depth for the Kim model are derived based on the mean value theorem for integration. We also extend the results to the field-dependent critical state of superconducting strip in the simultaneous presence of applied field and transport current. The sheet current distributions calculated by the Kim model agree with experiments better than that by the Bean model. Moreover, the lines in the I a -B a plane for the Kim model are not monotonic, which is quite different from that the Bean model. The results reveal that the maximum transport current in thin superconducting strip will decrease with increasing applied field which vanishes for the Bean model. The results of this paper are useful to calculate ac susceptibility and ac loss.
机译:我们提出了一种精确的分析方法,用于具有输运电流的高T c超导带材的任意场相关临界状态。通过求解积分方程可以得出薄板电流和磁通密度分布图,这与实验非常吻合。对于小传输电流,基于积分定理,推导了Kim模型的薄板电流,通量密度和穿透深度的近似显式。我们还将结果扩展到超导带的场相关临界状态,同时存在施加的场和传输电流。 Kim模型计算出的薄板电流分布比Bean模型更好地符合实验。此外,Kim模型在I a -B a平面中的线不是单调的,这与Bean模型完全不同。结果表明,超薄导电带中的最大传输电流将随着施加场的增加而减小,这对于Bean模型来说是消失的。本文的结果对于计算交流磁化率和交流损耗非常有用。

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