Facile Construction of Dual p–n Junctions in CdS/Cu₂O/ZnO Photoanode with Enhanced Charge Carrier Separation and Transfer Ability

摘要

With the gradually increasing demand for solving the environmental pollution problem and energy crisis, efficient photocatalysts with superior charge carrier separation and transfer ability have attracted extensive research attention. Herein, n-type CdS-decorated p-Cu_(2)O-ZnO nanorod arrays (CdS/Cu_(2)O/ZnO NRAs), integrating the merits of both highly ordered structure and synergistic effect derived from dual p–n junctions, were successfully fabricated and further applied to photoelectrocatalysis. In this ternary nanocomposite, fast generation, separation, and transfer of charge carriers were achieved in the Cu_(2)O/ZnO and Cu_(2)O/CdS dual p–n junction regions due to their built-in electric field and appropriate band structures. Moreover, both highly ordered ZnO NRAs and compact CdS shell play the role of an electron collector and a transport channel that efficiently consumes the photoinduced electrons in the conduction band of Cu_(2)O, which considerably reduces the recombination rate of charge carriers. As expected, the perfect cooperation of the three participators leads to the highest photoconversion efficiency of 2.61% at ?0.275 V (versus saturated calomel electrode) and an incident photon-to-current conversion efficiency of 14.51% at 380 nm as well as the photoelectrocatalytic degradation ability of the optimized 30 min CdS/Cu_(2)O/ZnO NRAs photoanode as compared to that of the Cu_(2)O/ZnO and ZnO NRAs photoanodes. It is believed that the induced synergistic effect between dual p–n junctions and ZnO NRAs caused the superior performances of the CdS/Cu_(2)O/ZnO NRAs photoanode, and this ternary material with a unique structure may present a new way of thinking for potential applications in the photoelectrochemistry field.