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Surface Morphology and Sulfur Reduction Pathways of MoS2 Mo Edges of the Monolayer and (100) and (103) Surfaces by Molecular Hydrogen: A DFT Study

机译:分子氢的单层和(100)和(103)表面的MoS2 Mo边缘的表面形态和硫还原途径:DFT研究

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We have performed a density functional theory study of the MoS2 monolayer and the MoS2 (100) and (103) surfaces in relation to the early stages of the hydrodesulfurization reaction. In many X-ray diffraction (XRD) results, the (103) surface exhibits a higher peak than the (100) surface, yet one of the most frequently occurring surface has not been studied extensively. By analyzing experimental studies, we conclude that the (103) surface of MoS2 is the most frequently occurring edge surface when the sample size is thicker than ~10–15 nm. Herein, we report the first comparison of reaction paths for the formation of a sulfur vacancy on the (103) surface of MoS2, monolayer, and (100) surface of MoS2. The reason for the occurence of the (103) surface in the XRD patterns has been established. We point out the similarity in the reaction barriers for the monolayer and (100) and (103) surfaces and discuss the reason for it. Moreover, we found a more energetically favorable step in the reaction pathway for the formation of a sulfur vacancy, which allowed us to refine the previously established pathway.
机译:我们已经对MoS2单层以及MoS2(100)和(103)表面与加氢脱硫反应的早期阶段进行了密度泛函理论研究。在许多X射线衍射(XRD)结果中,(103)表面表现出比(100)表面更高的峰,但是尚未对最频繁出现的表面之一进行广泛研究。通过分析实验研究,我们得出结论,当样品的厚度大于〜10–15 nm时,MoS2的(103)表面是最常出现的边缘表面。在此,我们报告了在MoS2的(103)表面,单层和MoS2的(100)表面上形成硫空位的反应路径的第一个比较。已经确定了在XRD图案中出现(103)表面的原因。我们指出了单层和(100)和(103)表面在反应势垒方面的相似性,并讨论了产生这种现象的原因。此外,我们在反应途径中发现了一个在能量上更有利的步骤,以形成硫空位,这使我们能够完善先前建立的途径。

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