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首页> 外文期刊>Advanced Science >Earth‐Abundant Tin Sulfide‐Based Photocathodes for Solar Hydrogen Production
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Earth‐Abundant Tin Sulfide‐Based Photocathodes for Solar Hydrogen Production

机译:富含地球的硫化锡基光电阴极,用于生产太阳能氢

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摘要

Tin‐based chalcogenide semiconductors, though attractive materials for photovoltaics, have to date exhibited poor performance and stability for photoelectrochemical applications. Here, a novel strategy is reported to improve performance and stability of tin monosulfide (SnS) nanoplatelet thin films for H 2 production in acidic media without any use of sacrificial reagent. P‐type SnS nanoplatelet films are coated with the n ‐CdS buffer layer and the TiO 2 passivation layer to form type II heterojunction photocathodes. These photocathodes with subsequent deposition of Pt nanoparticles generate a photovoltage of 300 mV and a photocurrent density of 2.4 mA cm ?2 at 0 V versus reversible hydrogen electrode (RHE) for water splitting under simulated visible‐light illumination (λ 500 nm, P in = 80 mW cm ?2 ). The incident photon‐to‐current efficiency at 0 V versus RHE for H 2 production reach a maximum of 12.7% at 575 nm with internal quantum efficiency of 13.8%. The faradaic efficiency for hydrogen evolution remains close to unity after 6000 s of illumination, confirming the robustness of the heterojunction for solar H 2 production.
机译:锡基硫族化物半导体尽管是光伏的诱人材料,但迄今为止在光电化学应用中仍表现出较差的性能和稳定性。在这里,据报道一种新的策略可以提高在不使用牺牲试剂的情况下在酸性介质中生产H 2的单硫化锡(SnS)纳米血小板薄膜的性能和稳定性。 P型SnS纳米血小板膜涂有n-CdS缓冲层和TiO 2钝化层,形成II型异质结光电阴极。与可逆氢电极(RHE)相比,这些可在Pt纳米粒子随后沉积Pt纳米粒子的情况下产生300mV的光电压和2.4mA cm?2的光电流密度,以便在模拟可见光(λ> 500 nm,P in = 80 mW cm?2)。相对于RHE,H 2产生在0 V时的入射光子电流效率在575 nm处达到12.7%的最大值,内部量子效率为13.8%。照射6000 s后,析氢的法拉第效率仍然接近于1,这证实了异质结对太阳能H 2产生的鲁棒性。

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