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Earth‐Abundant Tin Sulfide‐Based Photocathodes for Solar Hydrogen Production

机译:富含地球的硫化锡基光电阴极用于生产太阳能氢

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摘要

Tin‐based chalcogenide semiconductors, though attractive materials for photovoltaics, have to date exhibited poor performance and stability for photoelectrochemical applications. Here, a novel strategy is reported to improve performance and stability of tin monosulfide (SnS) nanoplatelet thin films for H2 production in acidic media without any use of sacrificial reagent. P‐type SnS nanoplatelet films are coated with the n‐CdS buffer layer and the TiO2 passivation layer to form type II heterojunction photocathodes. These photocathodes with subsequent deposition of Pt nanoparticles generate a photovoltage of 300 mV and a photocurrent density of 2.4 mA cm−2 at 0 V versus reversible hydrogen electrode (RHE) for water splitting under simulated visible‐light illumination (λ > 500 nm, P in = 80 mW cm−2). The incident photon‐to‐current efficiency at 0 V versus RHE for H2 production reach a maximum of 12.7% at 575 nm with internal quantum efficiency of 13.8%. The faradaic efficiency for hydrogen evolution remains close to unity after 6000 s of illumination, confirming the robustness of the heterojunction for solar H2 production.
机译:锡基硫族化物半导体虽然是光伏的诱人材料,但迄今为止在光电化学应用中仍表现出较差的性能和稳定性。在这里,据报道一种新的策略可以提高在不使用牺牲试剂的情况下在酸性介质中生产H2的单硫化锡(SnS)纳米血小板薄膜的性能和稳定性。 P型SnS纳米血小板膜涂有n-CdS缓冲层和TiO2钝化层,形成II型异质结光电阴极。这些光阴极与随后沉积的Pt纳米粒子相比,可逆氢电极(RHE)产生300 mV的光电压和0 V下的2.4 mA cm −2 的光电流密度,以便在模拟可见光照射下进行水分解。 (λ> 500 nm,P in = 80 mW cm -2 )。氢气在0 V时相对于RHE的入射光子-电流效率在575 nm处最大达到12.7%,内部量子效率为13.8%。照射6000 s后,析氢的法拉第效率保持接近统一,这证实了异质结对太阳能H2生产的鲁棒性。

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