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首页> 外文期刊>Advances in condensed matter physics >Dopant Introduced Valley Polarization, Spin, and Valley Hall Conductivity in Doped Monolayer MoS2
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Dopant Introduced Valley Polarization, Spin, and Valley Hall Conductivity in Doped Monolayer MoS2

机译:掺杂剂在掺杂单层MoS2中引入了谷底极化,自旋和谷底霍尔电导率

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摘要

We study valley polarization, spin, and valley Hall conductivity in doped monolayer considering dopant introduced magnetic exchange field using low energy effective Hamiltonian. We found that dopant introduced magnetic exchange field breaks the time inversion symmetry and decouples the energetically degenerated valleys into nondegenerate. Moreover, the calculated result reveals that, at low temperature, in insulating regime, anomalous Hall conductivity in a single valley and the total valley Hall conductivity are quantized, whereas the total spin Hall conductivity vanishes identically. We also found that the strength of the spin-orbit coupling together with the exchange field determines the valley polarization, which in turn controls valley and spin Hall conductivity in doped monolayer system. The spin Hall and valley Hall conductivity is dissipationless in the absence of any external magnetic field. Therefore, our results are crucial to generate low power electronics devices.
机译:我们研究了使用低能量有效哈密顿量考虑掺杂物引入的磁场交换的掺杂单层中的谷底极化,自旋和谷底霍尔电导率。我们发现,掺杂剂引入的磁场交换破坏了时间反演的对称性,并使能量退化的波谷解耦为非退化的波谷。此外,计算结果表明,在低温条件下,在绝缘状态下,单个谷底霍尔电导率和总谷底霍尔电导率的异常被量化,而总自旋霍尔电导率则消失。我们还发现,自旋轨道耦合的强度与交换场一起决定了谷的极化,这反过来又控制了掺杂单层系统中的谷和自旋霍尔电导率。在没有任何外部磁场的情况下,自旋霍尔和谷底霍尔电导率是无耗散的。因此,我们的结果对于生产低功耗电子设备至关重要。

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