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4,5‐Diazafluorene‐Based Donor–Acceptor Small Molecules as Charge Trapping Elements for Tunable Nonvolatile Organic Transistor Memory

机译:4,5-二氮杂芴基供体-受体小分子作为可调谐非易失性有机晶体管存储器的电荷俘获元件

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Three diazafluorene derivatives triphenylamine (TPA)(PDAF) n ( n = 1, 2, 3) serving as small molecular elements are designed and synthesized via concentrated sulfuric acid mediated Friedel–Crafts reaction. With highly nonplanar topological configuration, TPA(PDAF) 3 shows weaker intermolecular interaction in the solid states and thus exhibits single nanomolecular behavior, which is crucial for charge stored and retained in an organic field‐effect transistor (OFET) memory device. Furthermore, diazafluorene derivatives possess a completely separate highest occupied molecular orbital/lowest unoccupied molecular orbital, which offers ideal hole and electron trapping sites. As charge storage elements, triphenylamine groups provide the hole trapping sites, while diazafluorene units provide the electron trapping sites and act as a hole blocking group to restrain the leakage of stored holes trapped in triphenylamine. The pentacene‐based OFET memory device with solution‐processing TPA(PDAF) 3 shows a good hole‐trapping ability, high hole trapping density (4.55 × 10 12 cm ?2 ), fast trapping speed (20 ms), a large memory window (89 V), and a tunable ambipolar memory behavior. The optimized device shows a large ON/OFF current ratio (2.85 × 10 7 ), good charge retention (10 4 s), and reliable endurance properties. This study suggests that diazafluorene based donor–acceptor small molecular elements have great promise for high‐performance OFET memory.
机译:通过浓硫酸介导的Friedel-Crafts反应,设计并合成了三种作为小分子元素的重氮芴衍生物三苯胺(TPA)(PDAF)n(n = 1,2,3)。 TPA(PDAF)3具有高度非平面的拓扑结构,在固态中显示出较弱的分子间相互作用,因此表现出单个纳米分子行为,这对于在有机场效应晶体管(OFET)存储设备中存储和保留电荷至关重要。此外,二氮杂芴衍生物具有完全分开的最高占据的分子轨道/最低的未占据的分子轨道,其提供了理想的空穴和电子俘获位点。作为电荷存储元件,三苯胺基团提供了空穴俘获位点,而二氮杂芴单元提供了电子俘获位点并充当了空穴阻挡基团,以限制被三苯胺捕获的空穴的泄漏。具有解决方案处理TPA(PDAF)3的并五苯OFET存储设备显示出良好的空穴捕获能力,高空穴捕获密度(4.55×10 12 cm?2),快速捕获速度(<20 ms),大内存窗口(89 V)和可调双极性存储行为。经过优化的器件具有较大的开/关电流比(2.85×10 7),良好的电荷保持能力(> 10 4 s)和可靠的耐久性能。这项研究表明,基于二氮杂芴的供体-受体小分子元素对高性能的OFET记忆具有广阔的前景。

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