SiGe HBTs Optimization for Wireless Power Amplifier Applications

摘要

This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate thefT-BVCEOtradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge) profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile) is conducted in order to improve thefTvalues at high injection levels.