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Cytotoxicity patterns of arsenic trioxide exposure on HaCaT keratinocytes

机译:HaCaT角质形成细胞上三氧化二砷暴露的细胞毒性模式

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Background: Arsenic is a ubiquitous environmental toxicant, and abnormalities of the skin are the most common outcomes of long-term, low-dose, chronic arsenic exposure. If the balance between keratinocyte proliferation, differentiation, and death is perturbed, pathologic changes of the epidermis may result, including psoriasis, atopic dermatitis, and certain forms of ichthyosis. Therefore, research investigations using in vitro human epidermal cells could help elucidate cellular and molecular processes in keratinocytes affected by arsenic. Data from such investigations could also provide the basis for developing cosmetic intervention for skin diseases caused by arsenic.Methods: The viability of HaCaT keratinocyte cultures with or without prior exposure to low-dose arsenic trioxide was compared for varying concentrations of arsenic trioxide over a time course of 14 days because in untreated control cultures, approximately 2 weeks is required to complete cell differentiation. Long-term cultures were established by culturing HaCaT cells on collagen IV, and cells were subsequently exposed to 0 parts per million (ppm), 1 ppm, 5 ppm, 7.5 ppm, 10 ppm, and 15 ppm of arsenic trioxide. The percentages of viable cells as well as DNA damage after exposure were determined on Day 2, Day 5, Day 8, and Day 14.Results: Using both statistical and visual analytics approaches for data analysis, we have observed a biphasic response at a 5 ppm dose with cell viability peaking on Day 8 in both chronic and acute exposures. Further, a low dose of 1 ppm arsenic trioxide enhanced HaCaT keratinocyte proliferation, whereas doses above 7.5 ppm inhibited growth.Conclusion: The time course profiling of arsenic trioxide cytotoxicity using long-term HaCaT keratinocyte cultures presents an approach to modeling the human epidermal cellular responses to varying doses of arsenic trioxide treatment or exposure. A low dose of arsenic trioxide appears to aid cell growth but concomitantly disrupts the DNA transcription process.
机译:背景:砷是一种普遍存在的环境毒物,长期,低剂量,慢性砷暴露最常见的后果是皮肤异常。如果干扰了角质形成细胞增殖,分化和死亡之间的平衡,则可能导致表皮的病理变化,包括牛皮癣,特应性皮炎和某些形式的鱼鳞病。因此,使用体外人类表皮细胞进行的研究可以帮助阐明受砷影响的角质形成细胞的细胞和分子过程。这些研究的数据也可为开发针对砷引起的皮肤疾病的美容干预措施提供基础。方法:比较了一段时间内不同浓度的三氧化二砷对有或没有先暴露于低剂量三氧化二砷的HaCaT角质形成细胞培养物的生存能力。在14天的过程中,因为在未经处理的对照培养物中,大约需要2周才能完成细胞分化。通过在胶原蛋白IV上培养HaCaT细胞来建立长期培养,随后将细胞暴露于百万分之0(ppm),1 ppm,5 ppm,7.5 ppm,10 ppm和15 ppm的三氧化二砷中。在暴露的第2天,第5天,第8天和第14天确定存活细胞的百分比以及DNA损伤后的结果。结果:使用统计和视觉分析方法进行数据分析,我们观察到在5时的双相反应。在慢性和急性暴露中,第8天的细胞生存力达到峰值的ppm剂量。此外,低剂量的1 ppm三氧化二砷会增强HaCaT角质形成细胞的增殖,而高于7.5 ppm的剂量会抑制生长。结论:使用长期HaCaT角质形成细胞培养物对三氧化二砷的细胞毒性进行时程分析,提供了一种模拟人类表皮细胞反应的方法不同剂量的三氧化二砷治疗或暴露。低剂量的三氧化二砷似乎有助于细胞生长,但同时会破坏DNA转录过程。

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