Fabrication and Characterization of CuPc Thin Film-Based Organic Field-Effect Transistor (OFET) for CO2 Gas Detection

摘要

Fabrication and characterization of OFET with bottom-contact structure and channel length of 100 μ m was carried out for detecting CO 2 gas. The OFET fabrication was done by, firstly, blenching the substrate with ethanol in an ultrasonic cleaner. It was, then, followed by the deposition of source and drain electrodes on the substrate by implementing a vacuum evaporation method and lithography technique. The CuPc thin film deposition between source/drain was, then, carried out. The characterization result showed that the active region of V D was (2.80 - 3.42) V and the current I D was (0.00095 - 0.00169) A. The fabricated OFET was tested to detect CO 2 gas. Its response time and recovery time was found to be gas 60 s and 50 s respectively.