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Chemistry of Thallium-based Topological Insulators

机译:hall基拓扑绝缘子的化学

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摘要

The goal of this review is to briefly introduce the chemistry of the topological insulators (TIs) based on thallium chalcogenides. Numerous phase diagrams of ternary Tl-B~(V)-X (B~(V) – Sb, Bi; X – Se, Te) systems having TlB~(V)X_(2) type compounds which exhibit spin polarized topological surface state? is evaluated and compiled. Published data on the phase equilibria in the quaternary Tl-Sb-Bi-X and Tl-BV-X-X~(/) systems are also reviewed and it has been revealed that their quasiternary Tl_(2)X-Sb_(2)X_(3)-Bi_(2)X_(3) and reciprocal 3Tl_(2)X+B~(V)_(2)X~(/)_(3)?3Tl_(2)X~(/)+B~(V)_(2)X_(3) subsystems form a wide range of solid solutions based on compounds TlB~(V)X_(2) and B~(V)_(2)X_(3), whose both confirmed as potential 3D TIs materials. All phase diagrams of respective systems offer profound possibilities for growth their large single crystals from melt.
机译:本文的目的是简要介绍基于introduce硫属元素化物的拓扑绝缘体(TIs)的化学性质。具有TlB〜(V)X_(2)型化合物的三元T1-B〜(V)-X(B〜(V)– Sb,Bi; X – Se,Te)体系的许多相图,这些化合物显示出自旋极化的拓扑表面州?被评估和编译。还审查了有关四元Tl-Sb-Bi-X和Tl-BV-XX〜(/)系统中相平衡的已发布数据,并且已经揭示了它们的四元Tl_(2)X-Sb_(2)X_( 3)-Bi_(2)X_(3)和倒数3Tl_(2)X + B〜(V)_(2)X〜(/)_(3)?3Tl_(2)X〜(/)+ B〜 (V)_(2)X_(3)子系统基于化合物TlB〜(V)X_(2)和B〜(V)_(2)X_(3)形成了多种固溶体,两者均被确认为潜在的3D TI材料。各个系统的所有相图为从熔体中生长出大的单晶提供了深远的可能性。

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