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High-efficiency thermoelectric Ba8Cu14Ge6P26: bridging the gap between tetrel-based and tetrel-free clathrates

机译:高效热电学Ba 8 Cu 14 Ge 6 P 26 :弥合基于铁水桶的和铁水桶的差距免包合物

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A new type-I clathrate, Ba8Cu14Ge6P26, was synthesized by solid-state methods as a polycrystalline powder and grown as a cm-sized single crystal via the vertical Bridgman method. Single-crystal and powder X-ray diffraction show that Ba8Cu14Ge6P26 crystallizes in the cubic space group Pmn (no. 223). Ba8Cu14Ge6P26 is the first representative of anionic clathrates whose framework is composed of three atom types of very different chemical natures: a transition metal, tetrel element, and pnicogen. Uniform distribution of the Cu, Ge, and P atoms over the framework sites and the absence of any superstructural or local ordering in Ba8Cu14Ge6P26 were confirmed by synchrotron X-ray diffraction, electron diffraction and high-angle annular dark field scanning transmission electron microscopy, and neutron and X-ray pair distribution function analyses. Characterization of the transport properties demonstrate that Ba8Cu14Ge6P26 is a p-type semiconductor with an intrinsically low thermal conductivity of 0.72?W m?1 K?1 at 812 K. The thermoelectric figure of merit, ZT, for a slice of the Bridgman-grown crystal of Ba8Cu14Ge6P26 approaches 0.63 at 812 K due to a high power factor of 5.62 μW cm?1 K?2. The thermoelectric efficiency of Ba8Cu14Ge6P26 is on par with the best optimized p-type Ge-based clathrates and outperforms the majority of clathrates in the 700–850 K temperature region, including all tetrel-free clathrates. Ba8Cu14Ge6P26 expands clathrate chemistry by bridging conventional tetrel-based and tetrel-free clathrates. Advanced transport properties, in combination with earth-abundant framework elements and congruent melting make Ba8Cu14Ge6P26 a strong candidate as a novel and efficient thermoelectric material.
机译:一种新的I型包合物Ba 8 Cu 14 Ge 6 P 26 ,通过固态方法合成为多晶粉末,并通过生长为厘米大小的单晶垂直Bridgman方法。单晶和粉末X射线衍射表明Ba 8 Cu 14 Ge 6 P 26 在立方空间群 Pm n 中结晶(否。 223)。 Ba 8 Cu 14 Ge 6 P < small> 26 是阴离子包合物的第一个代表,其骨架由化学性质非常不同的三种原子类型组成:过渡金属,蝶形元素和pnicogen。 Ba 8 Cu 14 <>中骨架部位上Cu,Ge和P原子的均匀分布,并且没有任何超结构或局部有序通过同步加速器X射线衍射,电子衍射确定/ sub> Ge 6 P 26 以及大角度环形暗场扫描透射电子显微镜,以及中子和X射线对分布函数的分析。传输性质的表征表明,Ba 8 Cu 14 Gesmall 6 P 26 是一种p型半导体,其固有的低导热系数为0.72?W m ?1 K ?1 在812 K时的热电功因数, ZT ,用于切片的布里奇曼生长的晶体。 Ba 8 Cu 14 Ge 6 P < small> 26 由于5.62μWcm的高功率因数在812 K下接近0.63 cm ?1 K < sup>?2 。 Ba 8 Cu 14 Ge 6 的热电效率small> P 26 与最佳优化的基于p型Ge的包合物相提并论,并且在700–850 K的温度范围内(包括所有的et头)胜过大多数包合物自由的包合物。 Ba 8 Cu 14 Ge 6 P < small> 26 通过桥接传统的基于铁氧体的和无铁氧体的包合物来扩展包合物的化学性质。先进的传输性能,结合地球上丰富的骨架元素和全熔性,使Ba 8 Cu 14 Ge < small> 6 P 26 作为新型高效热电材料的强大候选者。

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