首页> 外文期刊>Chalcogenide Letters >CONDUCTION STUDIES ON EVAPORATED CADMIUM SULPHIDE THIN FILMS
【24h】

CONDUCTION STUDIES ON EVAPORATED CADMIUM SULPHIDE THIN FILMS

机译:蒸发硫化镉薄膜的导电研究

获取原文
           

摘要

CdS thin films were prepared by thermal evaporation technique under vacuum onto glass substrates at different substrate temperatures with different gaps. The structure of the films was confirmed using X-ray diffraction (XRD). The deposited films were found to have a crystalline structure with hexagonal phase. The electrical properties were found to depend on the substrate temperatures. A significant increase of resistivity from 103 to 107 Ωm and space-charge-limited current were observed in CdS films evaporated by vacuum evaporation. Ohmic behavior was detected at low voltage, on the other hand the space charge limited current (SCLC) was noticed at high voltage. The transition voltage (Vt) was varied with substrate temperatures and the distance of the gaps.
机译:在真空下,通过热蒸发技术在玻璃基板上以不同的间隙,不同的间隙将CdS薄膜制备到玻璃基板上。使用X射线衍射(XRD)确认膜的结构。发现沉积的膜具有六方相的晶体结构。发现电性能取决于基底温度。在通过真空蒸发法蒸发的CdS膜中,观察到电阻率从103Ωm显着增加,并且限制了空间电荷的电流。在低电压下检测到欧姆行为,另一方面,在高电压下发现了空间电荷限制电流(SCLC)。转变电压(Vt)随衬底温度和间隙距离而变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号