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PHOTOELECTROCHEMICAL CHARACTERISTICS OF BRUSH ELECTRODEPOSITED CdSexTe1-x THIN FILMS

机译:电刷沉积的CdSexTe1-x薄膜的光化学特性

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CdSexTe1-x thin films were brush plated on titanium and conducting glass substrates from the precursors at different substrate temperatures in the range of 30 - 80°C. X-ray diffraction studies indicated the films to possess hexagonal structure irrespective of composition. The strain and dislocation density decrease with increase of substrate temperature. The crystallite size increased from 30 – 100 nm as the substrate temperature increased. Optical band gap of the films varied in the range of 1.45 – 1.72 eV. Photoelectrochemical cells were made with the electrodes of different composition. The photo output was nearly equal to earlier reports
机译:将CdSexTe1-x薄膜刷涂在钛上,并在30-80°C范围内的不同基材温度下,由前体制成导电玻璃基材。 X射线衍射研究表明,膜具有六边形结构,而与组成无关。应变和位错密度随衬底温度的升高而降低。随着基板温度的升高,微晶尺寸从30 – 100 nm增加。薄膜的光学带隙在1.45 – 1.72 eV的范围内变化。用不同组成的电极制成光电化学电池。照片输出几乎等于早期报告

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