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Absorbance and current-voltage hysteresis curve of silver sulfide thin films synthetized by solid-vapor reactions

机译:固蒸汽反应合成硫化银薄膜的吸光度和电流-电压磁滞曲线

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Silver sulfide thin films (Ag 2 S) with thickness ranging from 90 to 290 nm were synthesizedusing a low temperature (110 o C) solid-vapor reaction by sulfurizing(3h) sputtered silver on glass substrates.Samples were characterized by X -Ray diffraction, Field Emission G un Scanning Electron Microscopy and Energy Dispersive X -Ray Spectroscopy. In addition, optical and electrical properties were investigated using an Ultraviolet -Visible Spectrophotometer and a Physical Properties Measurement System.Results showsband gaps in the range of 1.7 to 2.6 eV that are dependent on the film thickness. Electrical propertiesexhibit a hysteresis I-V curve that is characteristic of memory devices and can be attributed to the Ag + ions migration inside the Ag 2 S film forming co nducting filaments.
机译:通过低温(110 o C)的固相反应,通过在玻璃基板上硫化(3h)溅射的银,合成了厚度为90至290 nm的硫化银薄膜(Ag 2 S),并通过X射线衍射对样品进行了表征,场发射扫描电子显微镜和能量色散X射线光谱学。此外,使用紫外可见分光光度计和物理性质测量系统研究了光学和电学性质,结果显示带隙在1.7至2.6 eV的范围内,取决于膜的厚度。电学特性表现出存储设备的特征,并且可以归因于Ag +离子在Ag 2 S薄膜形成导电细丝内部的迁移而产生的磁滞I-V曲线。

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