SMD PACKAGED ZnSSe ULTRA-VIOLET SCHOTTKY PHOTODETECTORS WITH HIGH DETECTIVITY

摘要

We report the 1/f noise and shot noise studies on molecular beam epitaxy (MBE)-grown ZnSSe UV detectors packaged in SMD leadframes for three detectors with different thicknesses of the active layer and the top electrode pad. The highest onset of reverse bias for the appearance of 1/f noise is -27.5V and the highest dark resistances at zero bias is R0= 3.7 X 1013.. The observed difference in their noise performance i mplies that the increase of the thicknesses of both the active layer and the top electrode pad can significantly lower the noise levels and in turn lead to higher detectivity. The best detectivity achieved is 8.75×1013cmHz1/2W-1in a detector with an active layer of 5000 . and a top electrode pad of Cr (50.) / Au (8000.).