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首页> 外文期刊>Bulletin of materials science >Electronic structure and magnetic studies of V-doped ZnO: ab initio and experimental investigations
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Electronic structure and magnetic studies of V-doped ZnO: ab initio and experimental investigations

机译:V掺杂ZnO的电子结构和磁性研究:从头算和实验研究

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In this study, the electronic structure of V-doped ZnO system is studied by means of density functional theory. Different concentrations of V and rising of Fermi level increase the relative occupation of majority/minority spin of 3d stateand also induce strong spin-splitting. The existence of three different states of V spin moment has been confirmed and is found to be concentration dependent. We found that O p-orbitals are responsible for the origin of the magnetic moment.Rudermana??Kittela??Kasuyaa??Yosida mechanism and the atomic spin polarization of V are the key factors for the appearance of ferromagnetism in V-doped ZnO system. The synthesized nanoparticles exhibit hexagonal wurtzite crystal structure, where both crystallite size and lattice parameters vary with V content. Magnetic measurements at room temperature confirm the ferromagnetic behaviour of V-doped ZnO system.
机译:本研究利用密度泛函理论研究了V掺杂ZnO体系的电子结构。不同的V浓度和费米能级的增加增加了3d状态的多数/少数自旋的相对占有率,也引起了强烈的自旋分裂。已经确定了V自旋矩的三种不同状态的存在,并发现它们与浓度有关。我们发现O p轨道是引起磁矩的原因。Rudermana,Kittela,Kasuyaa,Yosida机理和V的原子自旋极化是V掺杂ZnO系统中铁磁性出现的关键因素。 。合成的纳米颗粒表现出六方纤锌矿型晶体结构,其中晶粒尺寸和晶格参数均随V含量而变化。室温下的磁性测量结果证实了掺杂V的ZnO系统的铁磁性能。

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