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Crossed SMPS MOSFET-based protection circuit for high frequency ultrasound transceivers and transducers

机译:基于交叉SMPS MOSFET的保护电路,用于高频超声收发器和换能器

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Background The ultrasonic transducer is one of the core components of ultrasound systems, and the transducer’s sensitivity is significantly related the loss of electronic components such as the transmitter, receiver, and protection circuit. In an ultrasonic device, protection circuits are commonly used to isolate the electrical noise between an ultrasound transmitter and transducer and to minimize unwanted discharged pulses in order to protect the ultrasound receiver. However, the performance of the protection circuit and transceiver obviously degrade as the operating frequency or voltage increases. We therefore developed a crossed SMPS (Switching Mode Power Supply) MOSFET-based protection circuit in order to maximize the sensitivity of high frequency transducers in ultrasound systems. The high frequency pulse signals need to trigger the transducer, and high frequency pulse signals must be received by the transducer. We therefore selected the SMPS MOSFET, which is the main component of the protection circuit, to minimize the loss in high frequency operation. The crossed configuration of the protection circuit can drive balanced bipolar high voltage signals from the pulser and transfer the balanced low voltage echo signals from the transducer. Methods The equivalent circuit models of the SMPS MOSFET-based protection circuit are shown in order to select the proper device components. The schematic diagram and operation mechanism of the protection circuit is provided to show how the protection circuit is constructed. The P-Spice circuit simulation was also performed in order to estimate the performance of the crossed MOSFET-based protection circuit. Results We compared the performance of our crossed SMPS MOSFET-based protection circuit with a commercial diode-based protection circuit. At 60?MHz, our expander and limiter circuits have lower insertion loss than the commercial diode-based circuits. The pulse-echo test is typical method to evaluate the sensitivity of ultrasonic transducers. Therefore, we performed a pulse-echo test using a single element transducer in order to utilize the crossed SMPS MOSFET-based protection circuit in an ultrasound system. Conclusions The SMPS-based protection circuit could be a viable alternative that provides better sensitivity, especially for high frequency ultrasound applications.
机译:背景技术超声换能器是超声系统的核心组件之一,其灵敏度与发射器,接收器和保护电路等电子组件的损耗密切相关。在超声设备中,保护电路通常用于隔离超声发射器和换能器之间的电噪声,并使不想要的放电脉冲最小化,以保护超声接收器。但是,保护电路和收发器的性能会随着工作频率或电压的增加而明显下降。因此,我们开发了基于MOSFET的交叉SMPS(开关模式电源)保护电路,以最大化超声系统中高频换能器的灵敏度。高频脉冲信号需要触发换能器,并且高频脉冲信号必须由换能器接收。因此,我们选择了SMPS MOSFET(它是保护电路的主要组件),以最大程度地减少高频工作时的损耗。保护电路的交叉配置可以驱动来自脉冲发生器的平衡双极性高压信号,并传输来自换能器的平衡低压回声信号。方法显示了基于SMPS MOSFET的保护电路的等效电路模型,以便选择合适的器件组件。提供保护电路的原理图和工作机制,以说明如何构建保护电路。为了估计基于MOSFET的交叉保护电路的性能,还进行了P-Spice电路仿真。结果我们将基于交叉SMPS MOSFET的保护电路与商用基于二极管的保护电路的性能进行了比较。在60?MHz时,我们的扩展器和限幅器电路的插入损耗要低于商用二极管电路。脉冲回波测试是评估超声换能器灵敏度的典型方法。因此,为了在超声系统中利用基于交叉SMPS MOSFET的保护电路,我们使用单元件换能器进行了脉冲回波测试。结论基于SMPS的保护电路可能是可行的替代方案,可提供更高的灵敏度,尤其是在高频超声应用中。

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