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首页> 外文期刊>Beilstein journal of organic chemistry. >Molecular-level architectural design using benzothiadiazole-based polymers for photovoltaic applications
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Molecular-level architectural design using benzothiadiazole-based polymers for photovoltaic applications

机译:使用基于苯并噻二唑的聚合物进行光伏应用的分子级建筑设计

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A series of low band gap, planar conjugated polymers, P1 (PFDTBT), P2 (PFDTDFBT) and P3 (PFDTTBT), based on fluorene and benzothiadiazole, was synthesized. The effect of fluorine substitution and fused aromatic spacers on the optoelectronic and photovoltaic performance was studied. The polymer, derived from dithienylated benzothiodiazole and fluorene, P1 , exhibited a highest occupied molecular orbital (HOMO) energy level at ?5.48 eV. Density functional theory (DFT) studies as well as experimental measurements suggested that upon substitution of the acceptor with fluorine, both the HOMO and lowest unoccupied molecular orbital (LUMO) energy levels of the resulting polymer, P2 , were lowered, leading to a higher open circuit voltage and short circuit current with an overall improvement of more than 110% for the photovoltaic devices. Moreover, a decrease in the torsion angle between the units was also observed for the fluorinated polymer P2 due to the enhanced electrostatic interaction between the fluorine substituents and sulfur atoms, leading to a high hole mobility. The use of a fused π-bridge in polymer P3 for the enhancement of the planarity as compared to the P1 backbone was also studied. This enhanced planarity led to the highest observed mobility among the reported three polymers as well as to an improvement in the device efficiency by more than 40% for P3 .
机译:合成了一系列基于芴和苯并噻二唑的低带隙平面共轭聚合物P1(PFDTBT),P2(PFDTDFBT)和P3(PFDTTBT)。研究了氟取代基和稠合的芳族间隔基对光电和光伏性能的影响。衍生自二噻吩基化苯并硫代二唑和芴的聚合物P1在〜5.48 eV处表现出最高的占据分子轨道(HOMO)能级。密度泛函理论(DFT)的研究以及实验测量表明,用氟取代受体后,所得聚合物P2的HOMO和最低未占据分子轨道(LUMO)的能级均降低,导致开孔率更高光伏器件的电路电压和短路电流总体提高了110%以上。此外,由于氟取代基与硫原子之间的静电相互作用增强,因此还观察到氟化聚合物P2在单元之间的扭转角减小,从而导致高的空穴迁移率。还研究了与P1主链相比,在聚合物P3中使用稠合的π桥来提高平面度。这种增强的平面性导致在报告的三种聚合物中观察到的迁移率最高,并且P3的器件效率提高了40%以上。

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