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Power Electronics 4 - The MOSFET

机译:电力电子4-MOSFET

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In his last article Rob Easthope considered the Junction Gate Field Effect Transistor or JFET. In this, his latest article, he examines the power version of the FET, the Metal Oxide Semiconductor Field-Effect Transistor or MOSFET. Like the JFET the MOSFET also has a gate, a drain and a source, but unlike the JFET the gate is insulated. A very simplified diagram of the MOSFET construction is shown in Figure 1. The gate insulator is typically made from an oxide (such as silicon dioxide) overlaid with a layer of silicon nitride. This is an Insulated Gate Field-Effect Transistor or IGFET.
机译:罗布·伊斯特霍普(Rob Easthope)在他的上一篇文章中考虑了结栅场效应晶体管或JFET。在他的最新文章中,他研究了FET,金属氧化物半导体场效应晶体管或MOSFET的功率版本。像JFET一样,MOSFET也具有栅极,漏极和源极,但与JFET不同,栅极是绝缘的。 MOSFET结构的简化图如图1所示。栅极绝缘体通常由覆盖有氮化硅层的氧化物(例如二氧化硅)制成。这是一个绝缘栅场效应晶体管或IGFET。

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