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Changes in mass and stress during anodic oxidation and cathodic reduction of the Cu/Cu_2O multilayer film

机译:Cu / Cu_2O多层膜的阳极氧化和阴极还原过程中质量和应力的变化

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The anodic oxidation and cathodic reduction processes of the Cu/Cu_2O multilayer film and pure Cu film in pH 8.4 borate buffer solution were analyzed by electrochemical quartz crystal microbal-ance (EQCM) for gravimetry and bending beam method (BBM) for stress measurement. The mass loss of the multilayer film during anodic oxidation at 0.8 V (SHE) in the passive region was less than that of the pure Cu film. The comparison between current transients and mass changes during anodic oxidation has succeeded in separating the anodic current density into two partial current densities of oxide film growth, i_(O~(2-)), and of Cu~(2+) dissolution through the passive film, i_(Cu~(2+)). As a result, in the case of the pure Cu film, the anodic current density was mainly due to i_(Cu~(2+)), while in the case of the multilayer film, i_(Cu~(2+)) was almost equal to i_(O~(2-)). The compressive stress for the multilayer film was generated during anodic oxidation, while the tensile stress for the pure Cu film was generated. The mass loss of the multilayer film during cathodic reduction at a constant current density (i_c = -20 μA cm~(-2)) was significantly less than that estimated from coulometry, suggesting that H_2O produced by cathodic reduction remained in the multilayer film. The compressive stress was generated during cathodic reduction of the multilayer film, which was ascribed to H_2O remained in the multilayer film.
机译:采用电化学石英晶体微平衡(EQCM)法和弯曲束法(BBM)法对pH为8.4的硼酸盐缓冲溶液中的Cu / Cu_2O多层膜和纯Cu膜的阳极氧化和阴极还原过程进行了分析。钝化区域中在0.8 V(SHE)阳极氧化过程中多层膜的质量损失小于纯Cu膜的质量损失。阳极氧化过程中电流瞬变和质量变化之间的比较已成功地将阳极电流密度分为两个部分电流密度:氧化膜生长i_(O〜(2-))和Cu〜(2+)的溶解。无源膜i_(Cu〜(2+))。结果,在纯Cu膜的情况下,阳极电流密度主要归因于i_(Cu〜(2+)),而在多层膜的情况下,i_(Cu〜(2+))为几乎等于i_(O〜(2-))多层膜的压缩应力是在阳极氧化过程中产生的,而纯铜膜的拉伸应力是产生的。在恒定电流密度下(i_c = -20μAcm〜(-2))进行阴极还原时,多层膜的质量损失显着小于库仑法估计的质量损失,表明通过阴极还原产生的H_2O保留在多层膜中。在多层膜的阴极还原期间产生压应力,这归因于多层膜中残留的H_2O。

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