A fantastic two-dimensional M0S_2 material based on the inert basal planes activation: Electronic structure, synthesis strategies, catalytic active sites, catalytic and electronics properties

摘要

Molybdenum disulfide (MoS2), as a layered transition metal chalcogenide (TMC) material, has been widely employed in many fields, including electrode materials, photo(electro)chemical water splitting, transistors and biosensors and so on due to its unique electronic structure and physical/chemical properties. However, as a single semiconductor material, the large-scale application of MoS2 in many aspects is still limited, for example, the catalytic performance of semiconducting 2H-MoS2 is low due to the existence of a large number of inert basal planes; the high catalytic 1T-MoS2 cannot be prepared in large-scale. Considering these, a great deal of researches have been devoted to improve the electronic and catalytic activity of MoS2 (2H and 1T phase), such as activating 2H-MoS2 inert basal planes and applying the optimized technologies to directly prepare the desired 1T-MoS2, etc. In this review, two common phases of MoS2: 2H phase, 1T (1T', i.e. distorted form of 1T-MoS2) phase are introduced in detail from the point of view of electronic structure. The catalytic activity sites of these phases are discussed. Based on the preparation methods of MoS2 that have been reported in the past, the basic principles of these methods and the recent developments of MoS2 preparation are also introduced briefly, and some new preparation techniques are also mentioned. In addition, the mechanism and strategies of transformation of 2H and 1T phase in MoS2 are described in detail. Most importantly, this review summarizes comprehensively the activation strategies of MoS2 inert basal planes, which is of great significance for improving the catalytic activity of MoS2 and further research on MoS2. In the end, we have a comprehensive summary of the current application of MoS2 and its future developments. (C) 2019 Elsevier B.V. All rights reserved.