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Modeling memristor radiation interaction events and the effect on neuromorphic learning circuits.

机译:建模忆阻器辐射相互作用事件及其对神经形态学习电路的影响。

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This paper presents several event models for memristor radiation interaction with Verilog-A. Radiation events can "affect all synapses or affect each synapse with different flux or intensity," particularly for complex neuromorphic circuits. The simulation of neuromorphic circuits is thus important to emulate the effects of radiation. The paper uses the Cadence Virtuoso design suite with Verilog-A to model the events. There are generally two ways to emulate analog and mixed-signal activities on integrated circuits: Verilog-A focuses on pure analog systems, and real data type modeling with SystemVerilog or the universal verification methodology/verification methodology manual (UVM/VMM) verification methodology concentrates on modeling interactions between traditional digital systems and floating-point analog designs. Future work could consider emulation on real data types with System Verilog, which is more scalable and compatible with system-level simulation and integration.
机译:本文介绍了忆阻器辐射与Verilog-A相互作用的几种事件模型。辐射事件可以“影响所有突触或以不同的通量或强度影响每个突触”,尤其是对于复杂的神经形态回路。因此,神经形态电路的仿真对于仿真辐射的影响非常重要。本文使用带有Verilog-A的Cadence Virtuoso设计套件对事件进行建模。通常有两种方法可以模拟集成电路上的模拟和混合信号活动:Verilog-A专注于纯模拟系统,以及使用SystemVerilog或通用验证方法/验证方法手册(UVM / VMM)验证方法集中的真实数据类型建模传统数字系统和浮点模拟设计之间的交互建模。未来的工作可能会考虑使用System Verilog对真实数据类型进行仿真,它具有更高的可扩展性并与系统级仿真和集成兼容。

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  • 来源
    《Computing reviews 》 |2019年第4期| 167-167| 共1页
  • 作者

    Xiaokun Yang;

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