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A Case for the Scope of Reconfigurable Transistors in Computer Architecture

机译:计算机体系结构中可重构晶体管范围的案例

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Reconfigurable field effect transistors (RFET) is expected to offer a lower transistor count and decreased area consumption compared to conventional CMOS. While the semiconductor industry is moving towards sub-lOnm transistor technologies, silicon nanowires are considered a major evolutionary step for FinFET technology due to their outstanding electrostatic control over the channel. The first use of SiNW for implementing reconfigurable transistors was demonstrated in 2012. However, a key advantage of SiNW RFET is logic reconfigurability at the device level. Conventional CMOS relies on fixed PMOS and NMOS transistors that respectively operate p- (holes being the charge carriers) and n-type (electrons carrying charge) channels. A single SiNW RFET device, however, can be configured to operate with n- or p-type channels at runtime. This fine-grain reconfigurability enables the circuit to realize multiple functionalities depending on the configuration of the devices.
机译:与传统的CMOS相比,可重构场效应晶体管(RFET)有望提供更少的晶体管数量和更少的面积消耗。在半导体行业朝着亚10m晶体管技术发展的同时,硅纳米线由于其对沟道的出色静电控制能力,被认为是FinFET技术的重要发展步骤。 2012年,SiNW首次用于实现可重配置晶体管。但是,SiNW RFET的主要优势是器件级的逻辑可重配置性。传统的CMOS依赖于固定的PMOS和NMOS晶体管,它们分别操作p-(空穴为电荷载流子)和n-类型(携带电荷的电子)沟道。但是,可以将单个SiNW RFET器件配置为在运行时使用n型或p型通道工作。这种细粒度的可重新配置性使电路能够根据设备的配置实现多种功能。

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