Ultrathin Thermoelectric Devices for On-Chip Peltier Cooling

摘要

The efficient usage of thermoelectric (TE) devices for microelectronics cooling application requires investigation and remedy of various obstacles such as integration of these devices with electronic package, parasitic contact resistances, and utilization of appropriate current pulses. We develop a computational model to investigate the effect of steady state and transient mode of operation of ultrathin thermoelectric cooler (TEC) devices on hot-spot cooling considering the effect of crucial thermal and electrical contact resistances. Our analysis shows that the transient pulses can be very effective in reducing the hot-spot temperature by 6–7$^{circ}{rm C}$ in addition to the cooling achieved by the steady state current through the TEC device. We correlate the important characteristics of the transient temperature behavior of hot-spot under the TEC operation such as the maximum temperature drop $(Delta T_{max})$, time taken to achieve $Delta T_{max}$ and temperature overshoot after turning off pulse current with the electrical and thermal contact resistances and Seebeck coefficient of the TE material. It has been observed that thermal and electrical contact resistances play a very crucial role in the performance of TEC devices as high values of these resistances can significantly diminish the effect of Peltier cooling during steady state operation. The effect of these parasitic resistances is even higher for the transient cooling of hot-spots by the pulsed current through the TEC device. High Seebeck coefficient of TE materials is desirable as it increases the figure of merit of TE devices. However, cooling capabilities of heat sink may become bottleneck to realize the benefits of very high Seebeck coefficient as the back heat flow from the hot side to col-n-nd side of TEC device diminishes the degree of cooling achieved by these ultrathin TECs.