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Reactive Metal Bonding of Carbon Nanotube Arrays for Thermal Interface Applications

机译:用于热界面应用的碳纳米管阵列的活性金属键合

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Vertically aligned carbon nanotube (CNT) arrays can offer an attractive combination of high thermal conductance and mechanical compliance for thermal interface applications. These arrays require a reliable, thermally conductive bonding technique to enable integration into devices. This paper examines the use of a reactive metal bonding layer to attach and transfer CNT arrays to metal-coated substrates, and the thermal performance is compared with CNT arrays bonded with indium solder. Infrared microscopy is used to simultaneously measure the intrinsic thermal conductivity of the CNT array and the thermal boundary resistance of both the bonded and growth CNT interfaces over a range of applied compressive stresses. A coarse-grained molecular simulation is used to model the effects of compressive pressure on the CNT array thermal conductivity. Reactive metal bonding reduces the thermal boundary resistance to as low as 27 K, which is more than an order of magnitude less than the nonbonded contact.
机译:垂直排列的碳纳米管(CNT)阵列可以为热界面应用提供高导热率和机械柔韧性的吸引人的组合。这些阵列需要可靠的导热键合技术才能集成到设备中。本文研究了使用反应性金属键合层将CNT阵列附着和转移到金属涂层的基板上,并将热性能与用铟焊料键合的CNT阵列进行了比较。红外显微镜用于同时测量在一定的压缩应力范围内CNT阵列的固有热导率以及键合和生长CNT界面的热边界电阻。粗粒分子模拟用于模拟压缩压力对CNT阵列导热系数的影响。活性金属键合将热边界电阻降低到低至27 K,这比非键合接触要小一个数量级。

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