Modelling and computer simulation study of laser-plasma interaction in semiconductor

摘要

Computer simulations were done extensively in order to study non-linear dynamics of laser-plasma interaction in InSb semiconductor. We constructed the modified Duffing kind of non-linear semiconductor plasma oscillator equation. Collision frequency is found to be dominant parameter to influence the bifurcation, chaos, hysteresis and bistable effects of plasma wave. Small windows of higher period cascade above the critical value of laser parameter (α_1α_2) in the Chaos region are observed.