Characterization of partially dissipated solitons in a traveling-wave field-effect transistor

摘要

We investigate the Korteweg-de Vries equation with nonlinear dissipation, which becomes finite only for small field intensities. Using the perturbation theory based on the inverse scattering transform, we evaluate the amplitude and the phase of both one- and two-soliton solutions to show that large solitons can travel without significant amplitude decay over a long distance. We then develop a traveling-wave field-effect transistor (TWFET) that supports such partially dissipated solitons. Using both the numerical and experimental characterization of a TWFET, we validate the properties of partially dissipated solitons.