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1/f Baseband Noise Suppression in OFDM Systems

机译:OFDM系统中的1 / f基带噪声抑制

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摘要

The commonly used direct-conversion Radio Frequency (RF) chips exhibit an additive 1/f baseband noise around the DC. The 1/f noise level increases as the transistors inside the RF chip become ever smaller. This type of noise mainly affects the low frequencies and can be very significant for small frequency allocations around the DC in Orthogonal Frequency-Division Multiple Access (OFDMA) systems. In this article we present the effects of such 1/f baseband noise on small frequency allocations for a Long Term Evolution (LTE) User Equipment (UE). We proceed to estimate the 1/f baseband noise. Suppression of the 1/f baseband noise is achieved by subtracting the estimated 1/f baseband noise from the received signal. We show that considerable processing gain is achieved when the 1/f baseband noise suppression is applied.
机译:常用的直接转换射频(RF)芯片在DC周围表现出附加的1 / f基带噪声。随着射频芯片内部的晶体管变得越来越小,1 / f噪声级会增加。这种类型的噪声主要影响低频,对于正交频分多址(OFDMA)系统中DC周围的小频率分配可能非常重要。在本文中,我们介绍了这样的1 / f基带噪声对长期演进(LTE)用户设备(UE)的小频率分配的影响。我们继续估计1 / f基带噪声。通过从接收信号中减去估计的1 / f基带噪声,可以实现1 / f基带噪声的抑制。我们表明,当应用1 / f基带噪声抑制时,可获得相当大的处理增益。

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