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New memory technologies impact semi cleanrooms

机译:新的内存技术影响半净室

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Austin, Texas—Freescale Semiconductor Inc. (www.freescale.com) has embarked on a memory technology—magnetic tunnel-junction random access memory, or MRAM—that is proving to have implications for manufacturing in Freescale's own cleanrooms. Another memory alternative, ferro-electric RAM, or FRAM, is already in production, and both could impact semiconductor cleanrooms throughout the industry. While Freescale doesn't make stand-alone memory chips, it inserts considerable storage into its automotive and consumer-embedded products. Embedded memories can run the gamut of technologies—from DRAM and SRAM to flash—which can add to product development compl
机译:飞思卡尔半导体公司(www.freescale.com)位于德克萨斯州奥斯汀,已着手开发一种存储技术-磁性隧道结随机存取存储器(MRAM)-已证明对飞思卡尔自有净室的制造具有影响。铁电RAM或FRAM是另一种存储器替代产品,已经投入生产,两者都可能影响整个行业的半导体洁净室。飞思卡尔不生产独立存储芯片,但它在其汽车和消费者嵌入式产品中插入了相当大的存储空间。嵌入式存储器可以运行从DRAM和SRAM到闪存的各种技术,可以增加产品开发的复杂性。

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