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A Novel Exponential Approximation with Error for Realizing an Improved CMOS Exponential Function Generator

机译:用于实现改进的CMOS指数函数发生器的新型带误差的指数逼近

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摘要

A new modified pseudo-Taylor exponential approximation is presented for realizing a current-to-current exponential function generator. The proposed approximation for exponential function generation has been implemented using translinear principle of MOSFETs operating in weak inversion region. The SPECTRE simulation tool from Cadence, with 180 nM CMOS process parameters, has been utilized for testing the workability of the CMOS implementation of the proposed approximation, which uses only power supply. The post-layout simulation results of the proposed CMOS exponential generator, thus, consume only power and produce 51.6 dB range of linear-in-dB output with only error while occupying an area of .
机译:提出了一种新的改进的伪泰勒指数逼近,以实现电流对电流指数函数发生器。拟议的指数函数生成近似方法已使用在弱反转区域工作的MOSFET的跨线性原理实现。来自Cadence的SPECTER仿真工具具有180 nM的CMOS工艺参数,已用于测试仅使用电源的CMOS实施方案的可操作性。因此,所提出的CMOS指数发生器的布局后仿真结果仅消耗功率,并产生51.6 dB的线性dB输出范围,而只有误差,而面积仅为。

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