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首页> 外文期刊>IEEE Circuits & Devices >A PERSPECTIVE FROM THE 2003 ITRS: MOSFET Scaling trends, challenges, and potential soultions
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A PERSPECTIVE FROM THE 2003 ITRS: MOSFET Scaling trends, challenges, and potential soultions

机译:2003 ITRS的观点:MOSFET的扩展趋势,挑战和潜在解决方案

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摘要

The IC industry has been rapidly and consistently scaling the design ruies, increasing the chip and wafer size, and cleverly improving the design of devices and circuits for over 35 years. As a result, the industry has enjoyed exponential increases in chip speed and functional density versus time combined with exponential decreases in power dissipation and cost per function versus time, as projected by Moore's Law [1], [2, Executive Summary Chapter], [3]. As metal-oxide semiconductor field-effect transistors (MOSFETs) are scaled to deep submicron dimensions, the integrated circuit (IC) industry is running into increasing difficulties in continuing to scale at the accustomed rate, owing to the small dimensions and certain key device, material, and process limits that are being approached.
机译:在过去的35年中,IC行业一直在迅速,持续地扩展设计准则,增加芯片和晶片的尺寸以及巧妙地改善设备和电路的设计。结果,正如摩尔定律[1],[2,执行摘要章节] [[]所预测的那样,该行业的芯片速度和功能密度随时间呈指数级增长,而功耗和每功能成本随时间呈指数级下降。 3]。随着金属氧化物半导体场效应晶体管(MOSFET)缩放到深亚微米尺寸,由于尺寸小和某些关键器件的原因,集成电路(IC)行业在继续按常规速率进行缩放方面遇到了越来越大的困难,材料和正在接近的工艺极限。

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